Photoluminescence of Hexagonal Boron Nitride (h-BN) Film

Defect-related photoluminescence of hexagonal boron nitride

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and...

Sub-Angstrom Edge Relaxations Probed by Electron Microscopy in Hexagonal Boron Nitride (h-BN)

Step flow versus mosaic film growth in hexagonal boron nitride.

Many emerging applications of hexagonal boron nitride (h-BN) in graphene-based nanoelectronics require high-quality monolayers as the ultrathin dielectric. Here, the nucleation and growth of h-BN monolayer on Ru(0001) surface are investigated using scanning tunneling microscopy with a view toward understanding the process of defect formation on a strongly interacted interface. In contrast to ho...

Hexagonal boron-nitride nanomesh magnets

Photoluminescence properties of pyrolytic boron nitride

We report on spectroscopic study of pyrolytic hBN (pBN) by means of time-and energy-resolved photoluminescence methods. A high purity of pBN samples (though low crystallinity) allows complementary information about excited states involved into the luminescence process. We affirm our recent conclusions about the impurity-related nature of most of the fluorescence bands in microcrystalline hBN. I...